Identifying Precursors to Failure for Insulated Gate Bipolar Transistors (IGBTs)
CALCE Team: Nishad Patil, Myra Torres and Dr. Diganta Das
Objectives: To identify precursors to failure for IGBTs using physics of failure methods and models.
Introduction: The industry consensus is that the trend towards more electric aircraft will result in increased use of power semiconductor devices. Power semiconductor devices also find increased use in the automotive industry particularly in the hybrid and electric vehicles. In all these circumstances, power semiconductor failure or degradation can be costly. Failure of course, can result in complete loss of power and may even have safety consequences. Degradation of the devices can also result in reduced efficiency, thereby defeating the purpose of the power systems. The Insulated Gate Bipolar Transistor (IGBT) is a power transistor that combines fast switching speeds of the MOSFET with high current capability of bipolar transistors. IGBTs are replacing and supplementing power MOSFETs in sectors such as avionics, industrial, and automotive for power conversion and motor speed control. It is necessary to be able to predict when a maintenance action will be necessary during the operation of the power electronics modules which incorporate power semiconductor devices such as the Insulated Gate Bipolar Transistors (IGBT).